FRAM Memory ICs — Ferroelectric RAM, Unlimited Write Cycles

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FRAM Memory ICs — Ferroelectric RAM with Unlimited Write Cycles FRAM (Ferroelectric RAM) is a revolutionary non-volatile memory technology that combines the best properties of SRAM and EEPROM: it writes at bus speed (no write delay), has virtually unlimited write endurance (100 trillion cycles vs 1 million for EEPROM), and retains data without power like EEPROM. FRAM is the correct choice for any application that writes data frequently — odometers, event counters, real-time data logging, and power-fail safe storage. Available FRAM ICs (Cypress / Infineon) FM24CL16-G (2KB, I²C): 16Kbit, 400kHz, 2.7V–3.6V — small configuration and counter storage FM24CL64B (8KB, I²C): 64Kbit, 400kHz, 2.7V–3.6V — most popular FRAM for Arduino and embedded systems FM6316FE (32KB, SPI): 256Kbit, 40MHz SPI, 2.7V–3.6V — high-speed SPI FRAM for demanding applications FRAM vs EEPROM — Why FRAM Wins for Frequent Writes EEPROM write endurance: 1,000,000 cycles — exhausted in 11 days at 1 write/ms FRAM write endurance: 100,000,000,000,000 cycles — effectively unlimited for any application EEPROM write time: 5ms per byte (blocking — MCU must wait) FRAM write time: No delay — write completes at I²C/SPI bus speed Cost: FRAM costs more than EEPROM — use FRAM only when endurance or write speed matters When to Use FRAM Odometers and hour meters: Frequent non-volatile counter updates without wear Real-time data logging: Log sensor data at high rates without write delay or wear Power-fail safe storage: Write critical data instantly before power loss (no 5ms write delay) Event counters: Count events millions of times per day without EEPROM wear Industrial control: Real-time parameter storage in PLCs and control systems All FRAM ICs are new, original Cypress (Infineon) parts in SOP-8 packages. 100 trillion write cycles, 10-year data retention at +85°C.